Brand
Fairchild(2)
Infineon(2)
ST Microelectronics(1)
ON Semiconductor(1)
Multiple choices
Encapsulation
TO-247-3(1)
TO-220(2)
TO-220F-3(1)
TO-220-3(2)
Multiple choices
Packaging
Rail, Tube(6)
Model/Brand/Package
Category/Description
Inventory
Price
Data
  • Encapsulation: TO-220
    Description: UniFET™ N Channel MOSFET, Fairchild Semiconductor UniFET ™ MOSFET is Fairchild Semiconductor's high-voltage MOSFET series. It has the smallest on state resistance in planar MOSFETs, as well as excellent switching performance and high avalanche energy intensity. In addition, the internal gate source ESD diode enables UniFET-II ™ MOSFET can withstand surge stress exceeding 2000V HBM. UniFET ™ MOSFET is suitable for switch mode power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supply, ATX (advanced technology extension), and electronic lamp ballasts. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage(
    6872
    10+
    $7.4988
    100+
    $7.1239
    500+
    $6.8739
    1000+
    $6.8614
    2000+
    $6.8114
    5000+
    $6.7489
    7500+
    $6.6989
    10000+
    $6.6739
  • Encapsulation: TO-220-3
    Description: STMICROELECTRONICS STFH10N60M2 Power Field Effect Transistor, MOSFET, N-channel, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V New
    7292
    10+
    $6.9840
    100+
    $6.6348
    500+
    $6.4020
    1000+
    $6.3904
    2000+
    $6.3438
    5000+
    $6.2856
    7500+
    $6.2390
    10000+
    $6.2158
  • Brand: Infineon
    Encapsulation: TO-220-3
    Description: INFINEON IPP60R190P6XKSA1 Power Field Effect Transistor, MOSFET, N-channel, 20.2 A, 600 V, 0.171 ohm, 10 V, 4 V
    8025
    5+
    $15.2123
    50+
    $14.5622
    200+
    $14.1982
    500+
    $14.1072
    1000+
    $14.0162
    2500+
    $13.9121
    5000+
    $13.8471
    7500+
    $13.7821
  • Brand: Fairchild
    Encapsulation: TO-220F-3
    Description: FAIRCHILD SEMICONDUCTOR FCPF400N80Z 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.34 ohm, 10 V, 4.5 V
    9884
  • Brand: Infineon
    Encapsulation: TO-220
    Description: INFINEON IPA65R600E6XKSA1 功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
    7193
  • Brand: Fairchild
    Encapsulation: TO-247-3
    Description: SupreMOS® MOSFET,Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。 与 Fairchild 的 600V SuperFET™ MOSFET 相比,其低 RDS(接通)和总栅极电荷让品质因素 (FOM) 降低了 40%。 此外,SupreMOS 系列为相同的 RDS(接通)提供低栅极电荷,提供极佳的切换性能,切换和传导损耗降低 20%,从而获得更高的效率。 这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
    5179

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